IPD60R385CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• Worldwide best R _ds,on in TO252
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPD60R385CP
650 V
0.385 Ω
17 nC
PG-TO252
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPD60R385CP
Package
PG-TO252
Ordering Code
SP000062533
Marking
6R385P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
Gate source voltage
V _GS
I _D=3.4 A, V _DD=50 V
I _D=3.4 A, V _DD=50 V
V _DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
Rev. 2.0
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2006-04-04