IPD60N10S4-12 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Normal Level - Enhancement mode

OptiMOS^TM-T2 Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD60N10S4-12
Product Summary
V_DS
R_DS(on),max
I_D
100 V
12.2 mW
60 A
PG-TO252-3-313
TAB
1
3
Type
IPD60N10S4-12
Package
Marking
PG-TO252-3-313 4N1012
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V¹⁾
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25°C
E _AS
I _D=30A
I _AS
-
V _GS
-
P _tot
T _C=25°C
T _j, T _stg -
Value
60
43
240
120
40
±20
94
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30