IPD50R520CP_08 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMos Power Transistor

Type
CoolMOS^TM Power Transistor
Package
• Lowest figure of merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC¹⁾ for target applications
Product Summary
V _DS @T_jmax
R _DS(on),max
Q _g,typ
IPD50R520CP
550 V
0.520 Ω
13 nC
PG-TO252
CoolMOS CP is designed for:
• Hard- & Softswitching SMPS topologies
• DCM PFC for Lamp ballast
• PWM for Lamp Ballast, PDP and LCD TV
Type
IPD50R520CP
Package
PG-TO252
Marking
5R520P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=2.5 A, V _DD=50 V
I _D=2.5 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
7.1
4.5
15
166
0.25
2.5
50
±20
±30
66
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.1
page 1
2008-04-10