IPD50R399CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Lowest figure of merit R_ON x Q_g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC¹⁾ for target applications
Product Summary
V_DS @T_jmax
R_DS(on),max
Q_g,typ
IPD50R399CP
550 V
0.399 
17 nC
PG-TO252
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• DCM PFC for Lamp Ballast
• PWM for Lamp Ballast & PDP and LCD TV
Type
IPD50R399CP
Package
PG-TO252
Marking
5R399P
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
I _D,pulse
E _AS
E _AR
I _AR
dv /dt
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=3.3 A, V _DD=50 V
I _D=3.3 A, V _DD=50 V
V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Value
9
6
20
215
0.33
3.3
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.0
page 1
2007-11-21