IPD50R1K4CE Datasheet, PDF (1/14 Pages) Infineon Technologies AG – 500V CoolMOSª CE Power Transistor

IPD50R1K4CE,IPU50R1K4CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
DPAK
tab
2
1
3
IPAK
tab
12 ₃
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
1.4
Ω
ID
4.8
A
Qg.typ
8.2
nC
ID,pulse
8.8
A
Eoss@400V
0.79
µJ
Type/OrderingCode
IPD50R1K4CE
IPU50R1K4CE
Package
PG-TO 252
PG-TO 251
Marking
50S1K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.4,2016-06-13