IPD50P04P4L-11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

IPD50P04P4L-11
OptiMOS^®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Product Summary
V _DS
R _DS(on),max
I_D
-40 V
10.6 mW
-50 A
PG-TO252-3-313
Type
IPD50P04P4L-11
Package
Marking
PG-TO252-3-313 4P04L11
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C,
V _GS=-10V¹⁾
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse
E _AS
I _D= -25A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
-50
A
-40
-200
18
mJ
-50
A
±16³⁾
V
58
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
06.08.2010