IPD50P04P4-13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

Type
OptiMOS^®-P2 Power-Transistor
Package
Marking
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD50P04P4-13
Product Summary
V _DS
R _DS(on)
I_D
-40 V
12.6 mW
-50 A
PG-TO252-3-313
Type
IPD50P04P4-13
Package
Marking
PG-TO252-3-313 4P0413
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
I _D,pulse
E _AS
T _C=25°C
I _D=-25A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
Unit
-50
A
-45
-20
18
mJ
-50
A
±20
V
58
W
-55 ... +175
°C
55/175/56
2011-03-14