IPD50N06S3L-06 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD50N06S3L-06
OptiMOS^®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V _DS
R _DS(on),max
I_D
55 V
6.0 mΩ
50 A
PG-TO252-3-11
Type
IPD50N06S3L-06
Package
Marking
PG-TO252-3-11 3N06L06
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Avalanche current, single pulse
Gate source voltage³⁾
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25 °C
E _AS
I _D=25 A
I _AS
V _GS
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
50
A
50
200
710
mJ
50
A
±16
V
136
W
-55 ... +175
°C
55/175/56
Rev. 1.2
page 1
2009-05-20