IPD40N03S4L-08_10 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

OptiMOS^®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD40N03S4L-08
Product Summary
V _DS
R _DS(on),max
I_D
30 V
8.3 mW
40 A
PG-TO252-3-11
Type
IPD40N03S4L-08
Package
Marking
PG-TO252-3-11 4N03L08
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Conditions
I_D
T _C=25°C, V _GS=10V¹⁾
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
I _D,pulse
E _AS
T _C=25°C
I _D=40A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
40
38
160
23
40
±16
42
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
-
Rev. 1.1
page 1
2010-10-05