IPD400N06NG_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
IPD400N06N G
60 V
40 mΩ
27 A
Type
IPD400N06N G
TPyapcekage
PG-TPOa2c5k2a-g3e
IMPaDr4k0in0gN06N G 400NP0G6N-TO252-3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C¹⁾
Avalanche energy, single pulse
E _AS
I _D=27 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=27 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{See figure 3}
Rev. 1.3
page 1
Value
27
19
108
80
6
±20
68
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-09-01