IPD35N10S3L-26 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD35N10S3L-26
Product Summary
V _DS
R _DS(on),max
I_D
100 V
26 mΩ
35 A
PG-TO252-3-11
Type
IPD35N10S3L-26
Package
Marking
PG-TO252-3-11 3N10L26
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V¹⁾
Pulsed drain current¹⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse¹⁾
E _AS
I _D=17A
Avalanche current, single pulse
I _AS
Gate source voltage²⁾
V _GS
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
35
25
120
175
35
±20
71
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-04-21