|
IPD350N06LG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor | |||
|
OptiMOS® Power-Transistor
Features
⢠For fast switching converters and sync. rectification
⢠N-channel enhancement - logicl level
⢠175 °C operating temperature
⢠Avalanche rated
⢠Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD350N06L G
60 V
35 mâ¦
29 A
Type
IPD350N06L G
Package
Marking
PG-TO252-3-11
350N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current
I D,pulse
T C=100 °C
T C=25 °C1)
Avalanche energy, single pulse
E AS
I D=29 A, R GS=25 â¦
Reverse diode dv /dt
dv /dt
I D=29 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Rev. 1.1
page 1
Value
29
20
116
80
6
±20
68
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-08
|
▷ |