IPD30N08S2-22 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD30N08S2-22
Product Summary
V _DS
R _DS(on),max
I_D
75 V
21.5 mΩ
30 A
PG-TO252-3-11
Type
IPD30N08S2-22
Package
Marking
PG-TO252-3-11 2N0822
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25 °C, V _GS=10 V¹⁾
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current2⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=30A
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
240
±20
136
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18