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IPD30N03S2L-07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor | |||
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OptiMOS® Power-Transistor
Features
⢠N-channel Logic Level - Enhancement mode
⢠Automotive AEC Q101 qualified
⢠MSL1 up to 260°C peak reflow
⢠175°C operating temperature
⢠Green package (lead free)
⢠Ultra low Rds(on)
⢠100% Avalanche tested
IPD30N03S2L-07
Product Summary
V DS
R DS(on),max
ID
30 V
6.7 mâ¦
30 A
PG-TO252-3-11
Type
IPD30N03S2L-07
Package
Marking
PG-TO252-3-11 2N03L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=30A
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
30
A
30
120
250
mJ
±20
V
136
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2006-07-18
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