IPD25N06S4L-30_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS®-T2 Power-Transistor

OptiMOS^®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD25N06S4L-30
Product Summary
V_DS
R_DS(on),max
I_D
60 V
30 mW
25 A
PG-TO252-3-11
Type
IPD25N06S4L-30
Package
Marking
PG-TO252-3-11 4N06L30
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V¹⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25°C
E _AS
I _D=12.5A
I _AS
-
V _GS
-
P _tot
T _C=25°C
T _j, T _stg -
Value
25
17
92
12
25
±16
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2015-10-07