IPD250N06N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

Type
OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
Type
IPD250N06N3 G
Product Summary
V _DS
R _DS(on),max
I_D
IPD250N06N3 G
60 V
25 mΩ
28 A
Package
Marking
PG-TO252-3
250N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
Pulsed drain current²⁾
I _D,pulse
Avalanche energy, single pulse³⁾
E _AS
Gate source voltage
V _GS
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
T _C=25 °C
I _D=20 A, R _GS=25 Ω
Value
Unit
28
A
20
112
13
mJ
±20
V
Rev.2.0
page 1
2008-11-26