IPD230N06NG_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor Features For dc/dc converters and sync. rectification

OptiMOS^® Power-Transistor
Features
• For dc/dc converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Pb-free lead plating, RoHS compliant
• Avalanche rated
Type
IPD230N06N G
Product Summary
V _DS
R _DS(on),max
I_D
IPD230N06N G
60 V
23 mΩ
30 A
Package
Marking
PG-TO252-3
230N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
TC=25 °C ¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=30 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=30 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
150
6
±20
100
-55 ... 175
55/175/56
1) _{Current is limited by bondwire;with an RthJC=1.5 K/W the chip is able to carry 43 A.}
2) _{See figure 3}
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.2
page 1
2008-09-01