IPD135N08N3G_14 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Ideal for high frequency switching

OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
IPD135N08N3 G
IPD135N08N3 G
Product Summary
V_DS
R_DS(on),max
I_D
80 V
13.5 mW
45 A
Package
Marking
PG-TO-252-3
135N08N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse³⁾
E _AS
I _D=45 A, R _GS=25 W
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.2
page 1
Value
Unit
45
A
39
180
50
mJ
±20
V
79
W
-55 ... 175
°C
55/175/56
2014-05-19