IPD110N12N3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM3Power-Transistor

OptiMOS^TM3Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on),max
I_D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G IPD110N12N3 G
IPD110N12N3 G
IPS110N12N3 G
120 V
11 mΩ
75 A
Package
Marking
PG-TO251-3
110N12N
PG-TO252-3
110N12N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Gate source voltage³⁾
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=75 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
3) _{Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V}
Value
Unit
75
A
54
300
120
mJ
±20
V
136
W
-55 ... 175
°C
55/175/56
Rev. 2.2
page 1
2009-07-09