IPD090N03LGE8177 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Avalanche rated
• Pb-free plating
Type
IPD090N03L G E8177
IPD090N03L G E8177
Product Summary
V _DS
R _DS(on),max
I_D
30 V
9 mΩ
40 A
Package
Marking
PG-TO252-3-11
090N03L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
dv /dt
V _GS
T _C=25 °C
T _C=25 °C
I _D=12 A, R _GS=25 Ω
I _D=40 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=175 °C
Rev. 2.0
page 1
Value
40
37
40
30
280
40
40
6
±20
Unit
A
mJ
kV/µs
V
2010-02-23