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IPD088N06N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor | |||
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Type
OptiMOS(TM)3 Power-Transistor
Features
⢠Ideal for high frequency switching and sync. rec.
⢠Optimized technology for DC/DC converters
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance RDS(on)
⢠N-channel, normal level
⢠100% avalanche tested
⢠Pb-free plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
Type
IPD088N06N3 G
IPD088N06N3 G
Product Summary
V DS
R DS(on),max
ID
60 V
8.8 mâ¦
50 A
Package
Marking
PG-TO252-3
088N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 â¦
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=2.1 K/W the chip is able to carry 67 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
50
47
200
43
±20
71
-55 ... 175
55/175/56
Rev. 2.0
page 1
Unit
A
mJ
V
W
°C
2008-11-26
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