IPD088N04LG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Type
OptiMOS^®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD088N04L G
• Pb-free plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
IPD088N04L G
40 V
8.8 mΩ
50 A
Package
Marking
PG-TO252-3
088N04L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=50 A, R _GS=25 Ω
Value
Unit
50
A
39
47
33
350
50
10
mJ
±20
V
Rev. 1.0
page 1
2007-12-06