IPD068P03L3G_14 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – single P-Channel in DPAK

OptiMOS^TM P3 Power-Transistor
Features
• single P-Channel in DPAK
• Qualified according JEDEC¹⁾ for target applications
• 175 °C operating temperature
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management
• Halogen-free according to IEC61249-2-21
IPD068P03L3 G
Product Summary
V_DS
R_DS(on),max
I_DD
V_GS = 10V
V_GS = 4.5V
-30 V
6.8 mW
11.0
-70 _A
PG-TO252-3
Type
IPD068P03L3 G
Package
Marking
PG-TO252-3 068P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _{D,pulse T C=25 °C}²⁾
E _AS
I _D=-70 A, R _GS=25 W
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Value
-70
-70
-280
149
±20
100
-55 ... 175
tbd
260
55/175/56
Unit
A
mJ
V
W
°C
°C
Rev. 2.1
page 1
2014-05-16