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IPD068N10N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor | |||
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IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
⢠175 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Ideal for high-frequency switching and synchronous rectification
Type
IPD068N10N3 G
100 V
6.8 mâ¦
90 A
Package
Marking
PG-TO252-3
068N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=90 A, R GS=25 â¦
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
Unit
90
A
72
360
130
mJ
±20
V
150
W
-55 ... 175
°C
55/175/56
Rev. 2.1
page 1
2008-10-21
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