IPD060N03LG Datasheet, PDF (1/12 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS

Type
OptiMOS^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Avalanche rated
• Pb-free plating
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
Product Summary
V _DS
R _DS(on),max
I_D
30 V
6 mΩ
50 A
Type
IPD060N03L G
• Avalanche rated
• Pb-free plating; RoHS compliant
IPF060N03L G
IPS060N03L G
IPU060N03L G
Package
PG-TO252-3
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3
Marking
060N03L
060N03L
060N03L
060N03L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
Rev. 2.0
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
dv /dt
V _GS
T _C=25 °C
T _C=25 °C
I _D=20 A, R _GS=25 Ω
I _D=50 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=175 °C
page 1
50
A
50
50
43
350
50
60
mJ
6
kV/µs
±20
V
2010-02-23