IPD05N03LAG Datasheet, PDF (1/12 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹⁾ for target application
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD05N03LA G IPF05N03LA G
IPS05N03LA G IPU05N03LA G
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
25 V
5.1 mΩ
50 A
Type
Type
IPD05N03LA
IPF05N03LA
IPPaSc0k5aNg0e3LA
IMPaUr0k5inNg03LA
IPD05N03LA
IPF05N03LA
IPS05N03LA
Package
Ordering Code Marking
P-TO252-3-11 Q67042-S4144 05N03LA
P-TO252-3-23 Q67042-S
05N03LA
P-TOP2-5T2O-32-5111-3-11 P-QT6O7205422--3S-23
05PN-T0O3L2A51-3-11
05N0P3-LTAO251-3-21 05QN60730L4A2-S4230 050N5N030L3ALA
IPU05N03LA
P-TO251-3-1
05N03LA
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=45 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=50 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
300
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2006-05-11