IPD05N03LA Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS 2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹⁾ for target application
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
25 V
5.1 mΩ
50 A
Type
IPD05N03LA
IPF05N03LA
IPS05N03LA
IPU05N03LA
Type
Package
Ordering Code Marking
IPD05N03LA
P-TO252-3-11 Q67042-S4144 05N03LA
IPPaFc0k5aNg0e3LA
P-TOP2-5T2O-32-5121-3-23 P-QT6O7205422--3S-23
05PN-T0O3L2A51-3-11
IOPrSd0e5riNn0g3CLAode Q670P4-2T-OS245114-43-11 QQ676074024-2S-4S194 05QN60730L4A2-S4244
IMPaUr0k5inNg03LA
05N0P3-LTAO251-3-21 05QN60730L4A2-S4230 050N5N030L3ALA
P-TO251-3-21
Q67042-S4230
05N03LA
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=45 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=50 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
50
50
350
300
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.7
page 1
2004-05-19