IPD053N06N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

Type
OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
Type
IPD053N06N3 G
Product Summary
V _DS
R _DS(on),max
I_D
IPD053N06N3 G
60 V
5.3 mΩ
90 A
Package
Marking
PG-TO252-3
053N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C²⁾
V _GS=10 V, T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse⁴⁾
E _AS
I _D=90 A, R _GS=25 Ω
Gate source voltage
V _GS
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 109 A.}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Value
90
78
360
68
±20
Unit
A
mJ
V
Rev.2.0
page 1
2008-11-25