IPD042P03L3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM P3 Power-Transistor

OptiMOS^TM P3 Power-Transistor
Features
• single P-Channel (Logic Level)
• Enhancement mode
• Qualified according JEDEC¹⁾ for target applications
• 175 °C operating temperature
• Pb-free; RoHS compliant
• applications: load switch, HS-switch
IPD042P03L3 G
Product Summary
V _DS
R _DS(on),max
I_D
V _GS = 10V
V _GS = 4.5V
-30 V
4.2 mΩ
6.8
-70
A
PG-TO252-3
Type
IPD042P03L3 G
Package
Marking
PG-TO252-3 042P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C²⁾
E _AS
I _D=-70 A, R _GS=25 Ω
V _GS
P _tot
T _C =25 °C
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Value
Unit
-70
A
-70
-280
269
mJ
±20
V
150
W
-55 ... 175
°C
class 2 ( 2 kV - < 4 kV)
260
°C
55/175/56
Rev. 2.0
page 1
2009-08-18