IPD03N03LB Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS 2 Power-Transistor

OptiMOS^®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
IPD03N03LB G
30
V
3.3 mΩ
90 A
PG-TO252-3-11
Type
IPD03N03LB G
Package
P-TO252-3-11
Ordering Code Marking
Q67042-S4260 03N03LB
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _C=25 °C²⁾
T _C=100 °C
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=90 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=90 A, V _DS=20 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Rev. 1.11
page 1
Value
90
90
360
240
6
±20
115
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2004-12-16