IPD038N06N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Type
OptiMOS^®3 Power-Transistor
Features
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• N-channel, normal level
• for sync. rectification, drives and dc/dc SMPS
• Avalanche rated
• Very low on-resistance R _DS(on)
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free plating; RoHS compliant
Type
IPD038N06N3 G
IPD038N06N3 G
Product Summary
V _DS
R _DS(on),max
I_D
60 V
3.8 mΩ
90 A
previous engineering
sample code:
IPD04xN06N
Package
Marking
PG-TO252-3
038N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
Pulsed drain current²⁾
I _D,pulse
Avalanche current, single pulse³⁾
I _AS
Avalanche energy, single pulse
E _AS
Gate source voltage
V _GS
1) _{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
T _C=25 °C
T _C=25 °C
I _D=90 A, R _GS=25 Ω
Value
Unit
90
A
90
360
90
165
mJ
±20
V
Rev.1.02
page 1
2010-08-12