IPD034N06N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

Type
OptiMOS^(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
Type
IPD034N06N3 G
IPD034N06N3 G
Product Summary
V _DS
R _DS(on),max
I_D
60 V
3.4 mΩ
100 A
Package
Marking
PG-TO252-3
034N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=100 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
100
100
400
149
±20
167
-55 ... 175
55/175/56
1)_{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=0.9 K/W the chip is able to carry 164 A.}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.0
page 1
Unit
A
mJ
V
W
°C
2008-12-11