IPD031N03M-G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OpiMOS 3 Power-Transistor

Type
OptiMOS^®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
Type
IPD031N03L G
• Pb-free plating; RoHS compliant
IPS031N03L G
IPD031N03L G
IPS031N03L G
30 V
3.1 mΩ
90 A
Package
Marking
PG-TO252-3-11
031N03L
PG-TO251-3-11
031N03L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
Rev. 1.03
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
I _D,pulse
I _AS
E _AS
dv /dt
V _GS
T _C=25 °C
T _C=25 °C
I _D=90 A, R _GS=25 Ω
I _D=90 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=175 °C
page 1
Value
90
90
90
79
400
90
60
6
±20
Unit
A
mJ
kV/µs
V
2008-04-15