IPC80N04S4-03_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

OptiMOS^TM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPC80N04S4-03
Product Summary
V_DS
R_DS(on)
I_D
40 V
3.3 m
80 A
PG-TDSON-8-23
1
1
Type
IPC80N04S4-03
Package
PG-TDSON-8-23
Marking
4N0403
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
I_D
I _D,pulse
E _AS
I _AS
V _GS
T _C=25°C,
T _J =175°C,
V _GS=10V
T _C=100 °C,
T _J =175°C,
V _GS=10 V
T _C=25 °C
I _D=40 A
-
-
Power dissipation
P _tot
T _C=25 °C,
T _J =175°C
Operating and storage temperature T _j, T _stg -
Value
80¹⁾
Unit
A
67^{1, 2)}
320
215
mJ
80
A
+/-20
V
100
W
-55 ... +175³⁾
°C
Rev. 1.0
page 1
2015-05-22