IPC100N04S5-1R9 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-5 Power-Transistor

IPC100N04S5-1R9
OptiMOS^™-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
V_DS
R_DS(on),max
I_D
40 V
1.9 mW
100 A
PG-TDSON-8-34
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
1
• 100% Avalanche tested
Type
IPC100N04S5-1R9
Package
Marking
PG-TDSON-8-34 5N041R9
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25°C
E _AS
I _D=50A
I _AS
-
V _GS
-
P _tot
T _C=25°C
T _j, T _stg -
Value
100
100
400
130
100
±20
100
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2016-09-07