IPB90R340C3 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

CoolMOS^™ Power Transistor
Features
• Lowest figure-of-merit R_ON x Q_g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
V_DS @ T_J=25°C
R_DS(on),max @T_J=25°C
Q_g,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T _J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current ²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
Avalanche energy, repetitive t _AR ^{2),3) E} AR
Avalanche current, repetitive t _AR ^{2),3) I} AR
I _D=3.1 A, V _DD=50 V
I _D=3.1 A, V _DD=50 V
MOSFET dv /dt ruggedness
dv /dt V _DS=0...400 V
Gate source voltage
V _GS
static
AC (f>1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _J, T _stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16