IPB80N08S4-06 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

OptiMOS^™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N08S4-06
IPI80N08S4-06, IPP80N08S4-06
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
80 V
5.5 mW
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N08S4-06
IPI80N08S4-06
IPP80N08S4-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0806
4N0806
4N0806
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V¹⁾
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25°C
E _AS
I _D=40A
I _AS
-
V _GS
-
P _tot
T _C=25°C
T _j, T _stg -
Value
80
80
320
270
75
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-20