IPB80N06S3L-06_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

OptiMOS^®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
5.6 mΩ
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L06
3N06L06
3N06L06
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
I _D,pulse
E _AS
T _C=25 °C
I _D=40 A
Avalanche current, single pulse
I _AS
Gate source voltage³⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
80
A
80
320
455
mJ
80
A
±16
V
136
W
-55 ... +175
°C
55/175/56
Rev. 1.1
page 1
2007-11-07