IPB80N06S2-H5 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2-H5
IPP80N06S2-H5
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
5.2 mΩ
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N06S2-H5
IPP80N06S2-H5
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-18162 2N06H5
PG-TO220-3-1 SP0002-18155 2N06H5
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse²⁾
E _AS
I _D= 80 A
Gate source voltage⁴⁾
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
700
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13