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IPB70N10S3L-12 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor | |||
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OptiMOS®-T Power-Transistor
Features
⢠N-channel - Enhancement mode
⢠Automotive AEC Q101 qualified
⢠MSL1 up to 260°C peak reflow
⢠175°C operating temperature
⢠Green product (RoHS compliant)
⢠100% Avalanche tested
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
12 mâ¦
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N10S3L-12
IPI70N10S3L-12
IPP70N10S3L-12
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N10L12
3N10L12
3N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25 °C
I D=35A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
A
48
280
410
mJ
70
A
±20
V
125
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2008-04-21
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