IPB70N10S3-12 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
100 V
11.3 mΩ
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N10S3-12
IPI70N10S3-12
IPP70N10S3-12
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N1012
3N1012
3N1012
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
I _D,pulse
E _AS
T _C=25 °C
I _D=35A
Avalanche current, single pulse
I _AS
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
A
48
280
410
mJ
70
A
±20
V
125
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2008-02-12