IPB600N25N3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB600N25N3 G IPP600N25N3 G
IPI600N25N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V _DS
R _DS(on),max
I_D
250 V
60 mΩ
25 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
Package
Marking
PG-TO263-3
600N25N
PG-TO220-3
600N25N
PG-TO262-3
600N25N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=25 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3}
25
18
100
210
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-10-23