IPB530N15N3G_13 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – N-channel, normal level

IPB530N15N3 G IPD530N15N3 G
IPI530N15N3 G IPP530N15N3 G
OptiMOS^TM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
Product Summary
V_DS
R_DS(on),max
I_D
150 V
53 mW
21 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen Free
• Qualified according to JEDEC¹⁾ for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G
IPP530N15N3 G
Package
Marking
PG-TO263-3
530N15N
PG-TO252-3
530N15N
PG-TO262-3
530N15N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3
530N15N
Value
Unit
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=18 A, R _GS=25 W
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
21
A
15
84
60
mJ
±20
V
68
W
-55 ... 175
°C
55/175/56
Rev. 2.6
page 1
2013-07-09