IPB45N06S3-16 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
PG-TO263-3-2
• Avalanche tested
IPB45N06S3-16
IPI45N06S3-16, IPP45N06S3-16
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
15.4 mΩ
45 A
PG-TO262-3-1
PG-TO220-3-1
Type
IPB45N06S3-16
IPI45N06S3-16
IPP45N06S3-16
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP0001-02224 3N0616
SP0001-02217 3N0616
SP0001-02218 3N0616
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse³⁾
Drain gate voltage²⁾
Gate source voltage⁴⁾
I _D,pulse
E _AS
V _DG
V _GS
T _C=25 °C
I _D= 27.5 A
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
45
33
180
95
55
±20
65
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2005-11-25