IPB260N06N3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
IPB260N06N3 G IPP260N06N3 G
Product Summary
V _DS
R _DS(on),max
I_D
60 V
26 mΩ
27 A
Type
IPB260N06N3 G IPP260N06N3 G
Package
Marking
PG-TO263-3
260N06N
PG-TO220-3
260N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
Avalanche energy, single pulse³⁾
Gate source voltage
I _D,pulse
E _AS
V _GS
T _C=100 °C
T _C=25 °C
I _D=20 A, R _GS=25 Ω
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.2
page 1
Value
Unit
27
A
19
108
13
mJ
±20
V
36
W
-55 ... 175
°C
55/175/56
2010-01-22