IPB200N25N3G_10 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

$(*'#$%^TM3 Power-Transistor
Features
9 # (!,,% * ,-0+ !**% 4% *
9 6# % **% ,2'!2% # (!0'% 6R _DS(on) product (FOM)
9 % 07*-5 -, 0% 1)12!,# % R _DS(on)
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Product Summary
V_DS
R_DS(on),max
I_D
250 V
20 m#
64 A
9   8 -. % 0!2),' 2% + . % 0!23 0%
9 " &0% % *% !$ . *!2),'  -  # -+ . *)!,2
9 3 !*)&)% $ !# # -0$ ),' 2-      ¹⁾ for target application
9 !*-'% , &0% % !# # -0$ ),' 2-         
9$ % !*&-0()'( &0% /3 % ,# 715)2# (),' !,$ 17,# (0-,-3 1 0% # 2)&)# !2)-,
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package
Marking
PG-TO263-3
200N25N
PG-TO220-3
200N25N
PG-TO262-3
200N25N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=47 A, R _GS=25 #
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3}
64
46
256
320
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2010-10-19