IPB180P04P4-03 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

Final Data Sheet
IPB180P04P4-03
OptiMOS^®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Product Summary
V _DS
R _DS(on)
I_D
-40 V
2.8 mW
-180 A
PG-TO263-7-3
Type
IPB180P04P4-03
Package
PG-TO263-7-3
Marking
4QP0403
Gate
Pin 1
Drain
Pin 4, Tab
Source
Pin 2, 3, 5, 6, 7
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current¹⁾
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse
E _AS
I _D=-60A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
-180
A
-131
-720
90
mJ
-180
A
±20
V
150
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2011-04-27