IPB180N06S4-H1 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

OptiMOS^®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra low R_DSon
• Ultra high I_D
IPB180N06S4-H1
Product Summary
V _DS
R _DS(on),max
I_D
60 V
1.7 mΩ
180 A
PG-TO263-7-3
Type
IPB180N06S4-H1
Package
PG-TO263-7-3
Marking
4N06H1
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C, V _GS=10V
T _C=100°C, V _GS=10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse²⁾
E _AS
I _D=90A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
180
720
700
180
±20
250
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-25