IPB180N04S3-02 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS®-T Power-Transistor

IPB180N04S3-02
OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V _DS
R _DS(on)
I_D
40 V
1.5 mΩ
180 A
PG-TO263-7-3
Type
IPB180N04S3-02
Package
PG-TO263-7-3
Marking
3QN0402
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
180
A
180
720
1880
mJ
±20
V
300
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2007-04-16