IPB17N25S3-100_15 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

OptiMOS^™-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB17N25S3-100
IPP17N25S3-100
Product Summary
V_DS
R_DS(on),max
I_D
250 V
100 mΩ
17 A
PG-TO263-3-2 PG-TO220-3-1
Type
IPB17N25S3-100
IPP17N25S3-100
Package
PG-TO263-3-2
PG-TO220-3-1
Marking
3N25100
3N25100
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25 °C, V _GS=10 V
T _C=100°C, V _GS=10V¹⁾
Pulsed drain current¹⁾
Avalanche energy, single pulse¹⁾
Avalanche current, single pulse
I _D,pulse
E _AS
I _AS
T _C=25°C
I _D=5.4A
-
Reverse diode dv /dt
dv /dt -
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
17
13.3
68
54
5.4
6
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2013-05-13